BL24C256A.pdf• Compatible with all I2C bidirectional data transfer protocol
• Memory array:
256 Kbits (32 Kbytes) of EEPROM
Page size: 64 bytes
Additional Write lockable page
• Single supply voltage and high speed:
1 MHz Random and sequential Read modes
• Write:
Byte Write within 3 ms
Page Write within 3 ms
Partial Page Writes Allowed
• Write Protect Pin for Hardware Data Protection
• Schmitt Trigger, Filtered Inputs for Noise Suppression
• High
reliability
Endurance: 1 Million Write Cycles
Data Retention: 100 Years
• Enhanced ESD/Latch
up protection
HBM 8000V
• 8-lead PDIP/SOP/TSSOP/UDFN packages
• Organization:
32K-bit x 8-bit
• 64-Byte Page Write Buffer
• Two-Wire Serial Interface
Bi-directional data transfer protocol
• Low Power CMOS Technology
Active Current less than 3 mA (5V)
Standby Current less than 6 µA (5V)
Standby Current less than 2 µA (2.5V)
• Wide Voltage Operation
IS24C256-2: Vcc = 1.8V to 5.5V
IS24C256-3: Vcc = 2.5V to 5.5V
• 1 MHz (I2 CTM Protocol) Compatibility
ADVANCED INFORMATION MARCH 2003
• Hardware Data Protection – Write Protect pin
• Sequential Read Feature
• Filtered Inputs for Noise Suppression
5 ms @ 5.0V
• High Reliability
Endurance: 100,000 Cycles
Data Retention: 40 Years
• Commercial and Industrial temperature ranges
• 8-pin PDIP, 8-pin SOIC, and 14-pin TSSOP
