300 mJ, 400 V, N−Channel Ignition IGBT, BLG3040 Replace ISL9V3040.
BLG3040
BLG3040.pdf
BLG3040.pdfFEATURES
• Low VCEsat
• High SCIS Energy
• Positive temperature coefficient
• Logic Level Gate Drive
PIN CONFIGUTION
优势替代
FEATURES
• SCIS Energy = 300 mJ at TJ = 25°C
• Logic Level Gate Drive
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
PIN CONFIGUTION
