20V P-CHANNEL ENHANCEMENT MODE MOSFET,DMP2010UFV Replace FDMC6686P.
DMP2010UFV
DMP2010UFV.pdf
DMP2010UFV.pdfFEATURES
• Low RDS(ON) – Ensures On State Losses Are Minimized
• Small Form Factor Thermally Efficient Package Enables
Higher Density End Products
• Occupies Just 33% of The Board Area Occupied by SO-8
Enabling Smaller End Product
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
PIN CONFIGUTION
优势替代
FEATURES
● Max rDS(on) = 4 mΩ at VGS = -4.5 V, ID = -18 A
● Max rDS(on) = 5.7 mΩ at VGS = -2.5 V, ID = -16 A
● Max rDS(on) =11.5 mΩ at VGS = -1.8 V, ID = -11 A
● High performance trench technology for extremely low
rDS(on)
PIN CONFIGUTION
