Silicon Germanium Low Noise Amplifier for LTE,SGM13005L2 Replace BGA7L1BN6.
优势替代
FEATURES
• Insertion power gain: 13.6 dB
• Low noise figure: 0.75 dB
• Low current consumption: 4.9 mA
• Insertion Loss in bypass mode: -2.2 dB
• Operating frequencies: 716 - 960 MHz
• Two-state control: Bypass- and High gain-Mode
• Supply voltage: 1.5 V to 3.6 V
• Digital on/off switch (1V logic high level)
• Ultra small TSNP-6-2 leadless package
(footprint: 0.7 x 1.1 mm2)
• B7HF Silicon Germanium technology
• RF output internally matched to 50 Ω
• Only 1 external SMD component necessary
• Pb-free (RoHS compliant) package
PIN CONFIGUTION
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