Silicon Germanium Low Noise Amplifier for LTE,SGM13005L3 Replace BGA7L1N6.
优势替代
FEATURES
• Insertion power gain: 13.3 dB
• Low noise figure: 0.90 dB
• Low current consumption: 4.4 mA
• Operating frequencies: 728 - 960 MHz
• Supply voltage: 1.5 V to 3.3 V
• Digital on/off switch (1V logic high level)
• Ultra small TSNP-6-2 leadless package
(footprint: 0.7 x 1.1 mm2)
• B7HF Silicon Germanium technology
• RF output internally matched to 50 Ω
• Only 1 external SMD component necessary
• 2kV HBM ESD protection (including AI-pin)
• Pb-free (RoHS compliant) package
PIN CONFIGUTION
