Silicon Germanium Low Noise Amplifier for LTE,SGM13006H1 Replace BGA7H1N6.
SGM13006H1 SGM13006H1.pdf
FEATURES

资料完善中













PIN CONFIGUTION
优势替代
BGA7H1N6 BGA7H1N6.pdf

No.11475

FEATURES

• Insertion power gain: 12.5 dB

• Low noise figure: 0.60 dB

• Low current consumption: 4.7 mA

• Operating frequencies: 2300 - 2690 MHz

• Supply voltage: 1.5 V to 3.3 V

• Digital on/off switch (1V logic high level)

• Ultra small TSNP-6-2 leadless package 

  (footprint: 0.7 x 1.1 mm2)

• B7HF Silicon Germanium technology

• RF output internally matched to 50 Ω

• Only 1 external SMD component necessary

• 2kV HBM ESD protection (including AI-pin)

• Pb-free (RoHS compliant) package

PIN CONFIGUTION
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