Silicon Germanium Low Noise Amplifier for LTE,SGM13006H2 Replace BGA7H1BN6.
SGM13006H2 SGM13006H2.pdf
FEATURES

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PIN CONFIGUTION
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BGA7H1BN6 BGA7H1BN6.pdf

No.11477

FEATURES

• Insertion power gain: 12.3 dB

• Low noise figure: 0.85 dB

• Low current consumption: 4.3 mA

• Insertion Loss in bypass mode: -3.1 dB

• Operating frequencies: 1805 - 2690 MHz

• Two-state control: Bypass- and High gain-Mode

• Supply voltage: 1.5 V to 3.6 V

• Digital on/off switch (1V logic high level)

• Ultra small TSNP-6-2 leadless package 

  (footprint: 0.7 x 1.1 mm2)

• B7HF Silicon Germanium technology

• RF output internally matched to 50 Ω

• Only 1 external SMD component necessary

• Pb-free (RoHS compliant) package

PIN CONFIGUTION
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