2.7 – 18V eFuse with True Reverse Blocking and DevSleep Support for SSDs,SGM2536 Replace TPS25940.
FEATURES

• Input Voltage: 2.7V to 23V, Surge up to 28V

• Back-to-Back FETs Structure

• Low On-Resistance: 24mΩ (TYP)

   On-State: Bidirectional Current Flow

   Off-State: Reverse Current Blocking

• Programmable Output Ramp Time

• Programmable Current Limit: 0.5A to 6A

    (±10% Accuracy for IILIM > 1A)

• Full Set of Protections

    Programmable Over-Voltage Lockout (OVLO)

    Short-Circuit Protection on OUT Pin

    Under-Voltage Lockout

    Thermal Shutdown

• Indication Options

    SGM2536Px: PG and PGTH

    SGM2536Fx: SPGD and nFAULT

• Behavior after Fault

    SGM2536xR: Auto-Retry

    SGM2536xL: Latch-Off

PIN CONFIGUTION
优势替代
TPS25940 TPS25940.pdf

No.11703

FEATURES

• 2.7 V – 18 V Operating Voltage, 20 V (Max)

• 42 mΩ RON (Typical)

• 0.6 A to 5.3 A Adjustable Current Limit (±8%)

• IMON Current Indicator Output (±8%)

• 200 μA Operating IQ (Typical)

• 95 μA DevSleep Mode IQ (Typical)

• 15 μA Disabled IQ (Typical)

• ±2% Overvoltage, Undervoltage Threshold

• Reverse Current Blocking

• 1 μs Reverse Voltage Shutoff

• Programmable dVo/dt Control

• Power Good and Fault Outputs

• -40°C to 125°C Junction Temperature Range

• UL 2367 Recognized

  – File No. 169910

  – RILIM ≥ 20 kΩ (4.81 A max)

• UL60950 - Safe during Single Point Failure Test

  – Open/Short ILIM detection


PIN CONFIGUTION
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