Automotive Low Side GaN and MOSFET Driver For High Frequency and Narrow Pulse Applications, Replace LMG1025
FEATURES

• 5V Supply Voltage

• 6A Peak Source and 4A Peak Sink Currents

• Ultra-Fast, Low-side Gate Driver for GaN and 

  Si FETs

• Minimum Input Pulse Width: 1ns

• Up to 60MHz Operation

• Propagation Delay: 2ns (TYP)

• Rise Time: 570ps (TYP)

• Fall Time: 610ps (TYP)

• Protection Features: 

   Under-Voltage Lockout (UVLO)

   Over-Temperature Protection (OTP)

• Available in Green WLCSP-0.88×1.28-6B and 

  TDFN-2×2-6AL Packages

PIN CONFIGUTION
优势替代
LMG1025 LMG1025.pdf

No.11392

FEATURES

• AEC-Q100 grade 1 qualified

• 1.25-ns typical minimum input pulse width

• 2.6-ns typical rising propagation delay

• 2.9-ns typical falling propagation delay

• 300-ps typical pulse distortion

• Independent 7-A pull-up and 5-A pull-down current

• 650-ps typical rise time (220-pF load)

• 850-ps typical fall time (220-pF load)

• 2-mm x 2-mm QFN package

• Inverting and non-inverting inputs

• UVLO and over-temperature protection

• Single 5-V supply voltage



PIN CONFIGUTION
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