• High-Bandwidth Data Path (up to 500 MHz(1))

• 5-V Tolerant I/Os With Device Powered Up or 

  Powered Down

• Low and Flat ON-State Resistance 

  (ron) Characteristics Over Operating Range

  (ron = 3 Ω Typ)

• Rail-to-Rail Switching on Data I/O Ports

  0-V to 5-V Switching With 3.3-V VCC

  0-V to 3.3-V Switching With 2.5-V VCC

• Bidirectional Data Flow With 

  Near-Zero Propagation Delay

• Low Input and Output Capacitance 

  Minimizes Loading and Signal Distortion

  (Cio(OFF) = 4 pF Typ)Fast Switching 

  Frequency (fOE = 20 MHz Max)

  Data and Control Inputs Provide 

  Undershoot Clamp Diodes

  Low Power Consumption

  (ICC = 0.3 mA Typ)

• VCC Operating Range From 2.3 V to 3.6 V

• Data I/Os Support 0-V to 5-V Signaling Levels

  (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)

• Control Inputs Can Be Driven by TTL,

  5-V, or 3.3-V CMOS Outputs

  Ioff Supports Partial-Power-Down Mode 

  Operation Latch-Up Performance 

  Exceeds 100 mA Per JESD 78, Class II

• ESD Performance Tested Per JESD 22

  2000-V Human-Body Model

  (A114-B, Class II)

• 1000-V Charged-Device Model (C101)

•Supports Both Digital and Analog 

  Applications: USB Interface, Differential 

  Signal Interface, Bus Isolation, Low-Distortion Signal Gating