• High-Bandwidth Data Path(up to 500 MHz (1))

• Equivalent to IDTQS3VH384 Device

• 5-V Tolerant I/Os With Device 

  Powered Up or Powered Down

• Low and Flat ON-State Resistance

  (ron) Characteristics Over Operating 

  Range(ron = 4 Ω Typ)

• Rail-to-Rail Switching on Data I/O Ports

  0- to 5-V Switching With 3.3-V VCC

  0- to 3.3-V Switching With 2.5-V V

• Bidirectional Data Flow With 

  Near-Zero Propagation Delay

• Low Input/Output Capacitance 

  Minimizes Loading and Signal Distortion

  (Cio(OFF) = 3.5 pF Typ)

• Fast Switching Frequency (fOE = 20 MHz Max)

• Data and Control Inputs Provide 

  Undershoot Clamp Diodes

• Low Power Consumption (ICC = 1 mA Typical)

• VCC Operating Range From 2.3 V to 3.6 V

• Data I/Os Support 0- to 5-V Signaling 

  Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)

• Control Inputs Can Be Driven by TTL or

  5-V/3.3-V CMOS Outputs

• Ioff Supports Partial-Power-Down Mode Operation

• Latch-Up Performance Exceeds 

  100 mA Per JESD 78, Class II

• ESD Performance Tested Per JESD 22

  2000-V Human-Body Model(A114-B, Class II)

  1000-V Charged-Device Model (C101)

• Supports Both Digital and Analog Applications: 

  PCI Interface, Differential Signal Interface, 

  Memory Interleaving, Bus Isolation, 

  Low-Distortion Signal Gating