P-Channel Enhancement Mode MOSFET
DMG1013T-7
DMG1013T-7.pdf
DMG1013T-7.pdf
No.10548
FEATURES
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected Up To 3kV
DESCRIPTION
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
APPLICATION CIRCUIT
PIN CONFIGUTION
