• N-Channel MOSFET

• Low On-Resistance:

  3.0 Ω @ 4.5V

  4.0 Ω @ 2.5V

  6.0 Ω @ 1.8V

  10 Ω @ 1.5V

• Very Low Gate Threshold Voltage, 1.2V max

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• ESD Protected Gate

• N-Channel Enhancement Mode Field Effecr Transisitor

• Case: DFN1006H4-3