N-Channel Enhancement Mode MOSFET
DMN26D0UT-7
DMN26D0UT-7.pdf
DMN26D0UT-7.pdf
No.10551
FEATURES
• Low On-Resistance:
3.0 Ω @ 4.5V
4.0 Ω @ 2.5V
6.0 Ω @ 1.8V
10 Ω @ 1.5V
• Very Low Gate Threshold Voltage, 1.0V max
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• ESD Protected Gate
DESCRIPTION
• N-Channel Enhancement Mode MOSFET
• Case: SOT-523
APPLICATION CIRCUIT
PIN CONFIGUTION
