P-Channel Enhancement Mode MOSFET with Integrated SBR
DMS2120LFWB-7 DMS2120LFWB-7.pdf

No.10553

FEATURES

• Low On-Resistance

• 95mΩ @VGS = -4.5V

• 120mΩ @VGS = -2.5V

• 150mΩ (typ) @VGS = -1.8V

• Low Gate Threshold Voltage, -1.3V Max

• Fast Switching Speed

• Low Input/Output Leakage

• Incorporates Low VF Super Barrier Rectifier (SBR)

• Low Profile, 0.5mm Max Height

DESCRIPTION

• Case: DFN3020B-8

• Case Material: Molded Plastic, “Green” Molding Compound. UL

  Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminal Connections: See Diagram

APPLICATION CIRCUIT
PIN CONFIGUTION
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