P-Channel Enhancement Mode MOSFET with Integrated SBR
DMS2120LFWB-7
DMS2120LFWB-7.pdf
DMS2120LFWB-7.pdf
No.10553
FEATURES
• Low On-Resistance
• 95mΩ @VGS = -4.5V
• 120mΩ @VGS = -2.5V
• 150mΩ (typ) @VGS = -1.8V
• Low Gate Threshold Voltage, -1.3V Max
• Fast Switching Speed
• Low Input/Output Leakage
• Incorporates Low VF Super Barrier Rectifier (SBR)
• Low Profile, 0.5mm Max Height
DESCRIPTION
• Case: DFN3020B-8
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
APPLICATION CIRCUIT
PIN CONFIGUTION
