N-Channel Enhancement Mode MOSFET.
2N7002T
2N7002T.pdf
2N7002T.pdf
No.13520
FEATURES
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
DESCRIPTION
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
• DC-DC Converters
• Power Management Functions
• Battery Operated Systems and Solid-State Relays
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
APPLICATION CIRCUIT
PIN CONFIGUTION
