100V N-Channel Enhancement Mode MOSFET.
DMT10H015LSS
DMT10H015LSS.pdf
DMT10H015LSS.pdf
No.13536
FEATURES
• 100% Unclamped Inductive Switch (UIS) Test in Production
• High Conversion Efficiency
• Low RDS(ON) – Minimizes On-State Losses
• Low Input Capacitance
• Fast Switching Speed
DESCRIPTION
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.
• Backlighting
• Power Management Functions
• DC-DC Converters
Mechanical Data:
• Case: SO-8
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See Diagram
• Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.074 grams (Approximate)
APPLICATION CIRCUIT
PIN CONFIGUTION
