100V N-Channel Enhancement Mode MOSFET.
DMN10H220LE
DMN10H220LE.pdf
DMN10H220LE.pdf
No.13540
FEATURES
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
DESCRIPTION
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Mechanical Data:
• Case: SOT223
• Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram Below
• Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
• Weight: 0.112 grams (Approximate)
APPLICATION CIRCUIT
PIN CONFIGUTION
