Dual N-Channel Enhancement Mode Field Effect Transistor
P2803HVG
P2803HVG.pdf
P2803HVG.pdf
No.10576
FEATURES
• V(BR)DSS: 30V
• RDS(ON): 27.5mΩ
• ID: 7A
DESCRIPTION
• Dual N-Channel Enhancement Mode Field Effect Transistor
APPLICATION CIRCUIT
PIN CONFIGUTION
