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40V Bi-directional GaN Enhancement-mode Power Transistor, SGMGB05340 P2P INN040W048A.
SGMGB05340 SGMGB05340.pdf
FEATURES

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INN040W048A INN040W048A.pdf

No.13963

FEATURES

• Bi-directional blocking capability

• GaN-on-Silicon E-mode HEMT technology

• Ultra-low on resistance

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