Dual N-Channel Enhancement Mode MOSFET
DMG4800LSD-13
DMG4800LSD-13.pdf
DMG4800LSD-13.pdf
No.10549
FEATURES
• 100% avalanche rated part
• Low RDS(on) - minimizes conduction losses
• Low Qg - minimizes switching losses
• Case: SO-8
DESCRIPTION
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
APPLICATION CIRCUIT
PIN CONFIGUTION
